hi-sincerity microelectronics corp. spec. no. : mos200905 issued date : 2009.02.27 revised date : 2010.06.30 page no. : 1/4 H8205A hsmc product specification H8205A dual n-channel enhancement -mode mosfet (20v, 6a) description this n-channel 2.5v specified mosfet is a rugged gate version of advanced trench process. it has been optimized for power management applications with a wide range of gate drive voltage (2.5v-10v) features ? r ds(on) =40m ? @v gs =2.5v, i d =5.2a; r ds(on) =25m ? @v gs =4.5v, i d =6a ? high density cell design for ultra low on-resistance ? high power and current handing capability ? fully characterized avalanche voltage and current ? ideal for li ion battery pack applications applications ? battery protection ? load switch ? power management absolute maximum ratings (t a =25 o c, unless otherwise noted) symbol parameter ratings units v ds drain-source voltage 20 v v gs gate-source voltage ? 8 v i d drain current 6 a i dm drain current (pulsed) *1 30 a p d total power dissipation @t a =25 o c 1.5 w total power dissipation @t a =75 o c 0.96 w t j , t stg operating and storage temper ature range -55 to +150 ? c r ? ja thermal resistance junction to ambient *2 83 ? c/w *1: maximum dc current limited by the package *2: 1-in 2 2oz cu pcb board 8-lead plastic tssop-8l package code: ts H8205A symbol & pin assignment pin 1: drain pin 2 / 3: source 1 pin 4: gate 1 pin 5: gate 2 pin 6 / 7: source 2 pin 8: drain q1 q2 1234 5 6 7 8
hi-sincerity microelectronics corp. spec. no. : mos200905 issued date : 2009.02.27 revised date : 2010.06.30 page no. : 2/4 H8205A hsmc product specification electrical characteristics (t a =25 ? c, unless otherwise noted) symbol characteristic test conditions min. typ. max. unit ? static bv dss drain-source breakdown voltage v gs =0v, i d =250ua 18 20 - v r ds(on) drain-source on-state resistance v gs =2.5v, i d =5.2a - 40 m ? v gs =4.5v, i d =6a - 25 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.5 v i dss zero gate voltage drain current v ds =16v, v gs =0v - - 1 ua i gss gate-body leakage current v gs = ? 8v, v ds =0v - - ? 100 na g fs forward transconductance v ds =10v, i d =6a 7 13 - s ? dynamic q g total gate charge v ds =10v, i d =6a, v gs =4.5v - 4.86 - nc q gs gate-source charge - 0.92 - q gd gate-drain charge - 1.4 - c iss input capacitance v ds =8v, v gs =0v, f=1mhz - 562 - pf c oss output capacitance - 106 - c rss reverse transfer capacitance - 75 - t d(on) turn-on delay time v dd =10v, i d =1a, v gs =4.5v r gen =6 ? - 8.1 - ns t r turn-on rise time - 9.95 - t d(off) turn-off delay time - 21.85 - t f turn-off fall time - 5.35 - ? drain-source diode characteristics i s maximum diode forward current - - 1.7 a v sd drain-source diode forward voltage v gs =0v, i s =1.7a - - 1.2 v note: pulse test: pulse width ? 300us, duty cycle ? 2% g s d r d v dd v out v in r g v gen switching test circuit t d(on) t on t r 90% 10% 50% 10% input, v in output, v out t d(off) t off t f 90% 10% inverted 90% 50% pulse width switching waveforms
hi-sincerity microelectronics corp. spec. no. : mos200905 issued date : 2009.02.27 revised date : 2010.06.30 page no. : 3/4 H8205A hsmc product specification tssop-8l dimension important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 ? factory 1: no. 38, kuang fu s. rd., fu-kou hsin-chu industrial park hsin-chu taiwan. r.o.c tel: 886-3-5983621~5 fax: 886-3-5982931 0.25 c l detail f detail f a a1 b e e1 e d r 0.15 seating plane 23 pin1 index 4 5 6 7 8 s dim min. max. a - 1.20 a1 0.05 0.15 b 0.19 0.3 c 0.09 0.20 d 2.90 3.10 e 6.20 6.60 e1 4.30 4.50 e 0.65 bsc l 0.45 0.75 s 0 o 8 o *: typical, unit: mm H8205A marking: year code month code pin style: 1.s2 2.g2 3.s1 4.g1 5 & 6 & 7 & 8.d note: green label is used for pb-free packing material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 8-lead tssop-8l plastic surface mounted package hsmc package code: ts
hi-sincerity microelectronics corp. spec. no. : mos200905 issued date : 2009.02.27 revised date : 2010.06.30 page no. : 4/4 H8205A hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c ? 5 o c 5sec ? 1sec pb-free devices. 260 o c +0/-5 o c 5sec ? 1sec figure 1: temperature profile t p t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 t 25 o c to peak time temperature
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